issue 1 - january 2006 1 www.zetex.com ? zetex semiconductors plc 2006 ZXTC2045E6 dual 40v complementary transistors in sot23-6 summary bv cev = 40v bv ceo = 30v features ? 40v complementary device up to 5 amps peak current high h fe sot236 package applications mosfet and igbt gate driving ordering information device marking 2045 device reel size tape width quantity per reel ZXTC2045E6ta 7? 8mm embossed 3,000 ZXTC2045E6tc 13? 8mm embossed 10,000 c2 b2 e2 c1 b1 e1 pin out - top view
ZXTC2045E6 issue 1 - january 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum rati ngs (each transistor) notes: (a) for a device surface mounted on 25mm x 25mm x 0.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) as above measured at t < 5 seconds. (c) for device with one active die. (d) for device with two active dice running at equal power. parameter symbol limit unit npn pnp collector-base voltage bv cbo 40 -40 v collector-emitter voltage bv cev 40 -40 v collector-emitter voltage bv ceo 30 -30 v emitter-base voltage bv ebo 7-7 v peak pulse current i cm 5-5 a continuous collector current (a) i c 1.5 -1.5 a base current i b 1-1 a power dissipation at t a =25 c (a) (c) linear derating factor p d 0.9 7.2 w mw/ c power dissipation at t a =25 c (a) (d) linear derating factor p d 1.1 8.8 w mw/ c power dissipation at t a =25 c (b) (c) linear derating factor p d 1.7 13.6 w mw/ c operating and storage temperature range t j , t stg -55 to +150 c thermal resistance parameter symbol value unit junction to ambient (a) (c) r ja 139 c/w junction to ambient (b) (c) r ja 73 c/w junction to ambient (a) (d) r jc 113 c/w
ZXTC2045E6 issue 1 - january 2006 3 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage bv cbo (-)40 (*) notes: (*) ( ) applies to pnp v i c = (-)100 a collector-emitter breakdown voltage bv cev (-)40 (*) v i c = (-)1 a 0.25v>v be >1.0v ( 0.25v ZXTC2045E6 issue 1 - january 2006 4 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices, ag ents and distributors please go to www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package details - sot23-6 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim millimeters inches min. max. min. max. a 0.90 1.45 0.354 0.0570 a1 0.00 0.15 0.00 0.0059 a2 0.90 1.30 0.0354 0.0511 b 0.35 0.50 0.0078 0.0196 c 0.09 0.26 0.0035 0.0102 d 2.70 3.10 0.1062 0.1220 e 2.20 3.20 0.0866 0.1181 e1 1.30 1.80 0.0511 0.0708 l 0.10 0.60 0.0039 0.0236 e 0.95 ref 0.0374 ref e1 1.90 ref 0.0748 ref l 0 30 0 30
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